PART |
Description |
Maker |
CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800E2C-66H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
2SK3712 |
High voltage: VDSS = 250 V Gate voltage rating: -30 V Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
AP20GT60ASP-HF AP20GT60ASP-HF14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Speed Switching
|
Advanced Power Electronics Corp.
|
AP20GT60I AP20GT60I14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Speed Switching
|
Advanced Power Electronics Corp.
|
AP30G120BSW-HF AP30G120BSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
AP30G120SW AP30G120SW-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
NTE3301 NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|